Description

80TD65 IGBT Price in Pakistan | NEC 80A 650V IGBT

The 80TD65 is a high-power IGBT (Insulated Gate Bipolar Transistor) module designed for industrial and high-voltage applications.Chip.pk give best 80TD65 IGBT Price in Pakistan . Below is a detailed explanation of its key features and specifications:

1. Basic Specifications

• Voltage Rating (Vces): 650V
  • Suitable for medium to high-voltage applications like motor drives, inverters, and power supplies.
• Current Rating (Ic): 80A (continuous)
  • Can handle high current loads, making it ideal for heavy-duty applications.
• Package Type: Typically comes in a module format (like TO-247 or similar) with isolated base for better thermal performance.

2. Key Features

• Low Saturation Voltage (Vce(sat)):
  • Ensures reduced conduction losses, improving efficiency.
• Fast Switching Speed:
  • Optimized for high-frequency switching applications (e.g., PWM motor control).
• High Short-Circuit Withstand Time:
  • Enhances reliability in fault conditions.
• Temperature Stability:
  • Operates effectively in a wide temperature range (typically -40°C to 150°C).

3. Applications

• Motor Drives: Used in industrial motor control (AC/DC drives).
• Power Inverters: For solar inverters, UPS systems, and welding machines.
• Industrial Power Supplies: High-efficiency switched-mode power supplies (SMPS).
• Electric Vehicle (EV) Systems: In traction inverters and charging systems.

4. Comparison with Similar IGBTs

5. Why Choose the 80TD65?

• Higher current handling (80A) compared to standard 75A IGBTs.
• Better thermal performance due to module packaging.
• Optimized for industrial-grade reliability.

Conclusion

The 80TD65 IGBT is a robust power semiconductor device suited for high-power switching applications requiring 650V voltage blocking and 80A current capacity. Its low losses, fast switching, and thermal stability make it a preferred choice in industrial and renewable energy systems.

1. Electrical Characteristics (Detailed)

Absolute Maximum Ratings

Key Electrical Parameters

2. Gate Driving Requirements

To ensure fast switching and minimal losses, proper gate driving is crucial:

• Recommended Gate Voltage (V_GE):
  • Turn-On: +15V (for low V_CE(sat))
  • Turn-Off: -5V to -15V (for fast turn-off & noise immunity)
• Gate Resistor (R_G):
  • Typically 5Ω to 20Ω (adjust based on switching speed & EMI needs).
  • Lower R_G → faster switching but higher voltage spikes.
  • Higher R_G → slower switching but reduced EMI.
• Gate Driver IC Example:
  • IR2110, FAN7388, or 2ED020I12-F (for high-side driving).

Example Gate Drive Circuit

+15V ────┐  
         │  
        R<sub>G</sub> (10Ω)  
         │  
         ├─── Gate  
-5V ─────┘

(A fast-recovery diode in anti-parallel with R_G can improve turn-off speed.)

3. Thermal Management

Since IGBTs generate heat during operation, proper cooling is essential:

• Maximum Junction Temperature (T_j): 150°C
• Thermal Resistance (Junction-to-Case): R_th(j-c) ≈ 0.25°C/W
• Heat Sink Requirement:
  • For 80A current & V_CE(sat) ≈ 2V, power dissipation = I² × R (conduction) + switching losses.
  • Estimated P_loss ≈ 100W – 200W in typical applications.
  • Required heat sink thermal resistance:

    Rth(h−a)=Tj−TaPloss−Rth(j−c)−Rth(c−h)Rth(h−a)​=Ploss​Tj​−Ta​​−Rth(j−c)​−Rth(c−h)​(Example: If T_j = 125°C, T_a = 40°C, P_loss = 150W → R_th(h-a) ≈ 0.3°C/W)

• Cooling Methods:
  • Forced Air Cooling (with a fan)
  • Liquid Cooling (for very high-power applications)
  • Heat Pipes (for compact designs)

4. Protection Circuits

To prevent damage, the following protections are recommended:

1. Overcurrent Protection (Desaturation Detection)
   • Use a desat circuit (e.g., with a diode + comparator) to detect high V_CE during a fault.
2. Snubber Circuits (for Voltage Spikes)
   • RC Snubber (e.g., 100Ω + 100nF) across C-E to dampen ringing.
3. Temperature Monitoring
   • NTC thermistor or thermal switch on the heat sink.

5. Typical Applications & Circuit Examples

A. Three-Phase Inverter (Motor Drive)

DC Bus (650V)  
   │  
   ├───[80TD65]─── Motor Phase U  
   ├───[80TD65]─── Motor Phase V  
   └───[80TD65]─── Motor Phase W

(Each IGBT is driven by a PWM signal from a microcontroller via a gate driver.)

B. Half-Bridge Converter (For SMPS)

High-Side: [80TD65V]  
Low-Side:  [80TD65V]  
Output:   ──► LC Filter → Load

(Requires a bootstrap gate driver like IR2110.)

6. Comparison with MOSFETs & Other IGBTs

7. Where to Buy & Alternatives

• Manufacturer: Likely from Infineon, STMicroelectronics, or Fuji Electric.
• Alternatives:
  • 75TD65 (lower current)
  • 100TD65 (higher current)
  • IKW75N65EH5 (similar specs, different package)